Invention Grant
- Patent Title: Display device and method for manufacturing the same
- Patent Title (中): 显示装置及其制造方法
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Application No.: US13273802Application Date: 2011-10-14
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Publication No.: US08878184B2Publication Date: 2014-11-04
- Inventor: Kunio Hosoya
- Applicant: Kunio Hosoya
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2007-314123 20071205
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L27/12 ; G02F1/1368 ; H01L27/13

Abstract:
A display device having the high aperture ratio and a storage capacitor with high capacitance is to be obtained. The present invention relates to a display device and a manufacturing method thereof. The display device includes a thin film transistor which includes a gate electrode, a gate insulating film, a first semiconductor layer, a channel protective film, a second semiconductor having conductivity which is divided into a source region and a drain region, and a source electrode and a drain electrode; a third insulating layer formed over the second conductive film; a pixel electrode formed over the third insulating layer, which is connected to one of the source electrode and the drain electrode; and a storage capacitor formed in a region where a capacitor wiring over the first insulating layer and the pixel electrode are overlapped with the third insulating layer over the capacitor wiring interposed therebetween.
Public/Granted literature
- US20120032177A1 Display Device and Method for Manufacturing the Same Public/Granted day:2012-02-09
Information query
IPC分类: