Invention Grant
- Patent Title: Light-emitting device comprising semiconductor nanocrystal layer free of voids and method for producing the same
- Patent Title (中): 包含无空隙的半导体纳米晶层的发光器件及其制造方法
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Application No.: US12985873Application Date: 2011-01-06
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Publication No.: US08878196B2Publication Date: 2014-11-04
- Inventor: Byoung Lyong Choi , Byung Ki Kim , Kyung Sang Cho , Soon Jae Kwon , Jae Young Choi
- Applicant: Byoung Lyong Choi , Byung Ki Kim , Kyung Sang Cho , Soon Jae Kwon , Jae Young Choi
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor Colburn LLP
- Priority: KR2005-90082 20050927
- Main IPC: H01L27/15
- IPC: H01L27/15 ; B82Y30/00 ; H01L51/50 ; B82Y20/00 ; H01L33/18 ; H01L33/08
Abstract:
A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.
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