A switching circuit comprises a first transistor and a second transistor formed in an active area of semiconductor substrate. The source and drain regions of the transistors are electrically connected to respective source wires and drain wires through a plurality of intermediate metal layers stacked above the transistor. Electrical connections between different layers are made with a plurality of vias. To improve switching performance, the intermediate wires are disposed such that intermediate wires electrically connected to the transistor source regions are not directly beneath the drain wires. Similarly, intermediate wires electrically connected to drain regions are arranged not to be directly underneath source wires.