Invention Grant
- Patent Title: Semiconductor light-emitting device and method for manufacturing the same
- Patent Title (中): 半导体发光装置及其制造方法
-
Application No.: US14054868Application Date: 2013-10-16
-
Publication No.: US08878218B2Publication Date: 2014-11-04
- Inventor: Kosuke Sato , Yoshitaka Sumitomo , Dai Wakamatsu , Yoshiyuki Aihara , Kimihiro Miyamoto , Satoshi Kinoshita
- Applicant: Nichia Corporation
- Applicant Address: JP Tokushima
- Assignee: Nichia Corporation
- Current Assignee: Nichia Corporation
- Current Assignee Address: JP Tokushima
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2012-229818 20121017
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/10

Abstract:
The invention provides semiconductor light-emitting devices which have a semiconductor layer on a principal surface of a translucent substrate and a reflective layer on a second principal surface opposite to the principal surface having the semiconductor layer, which enables that the peeling of the reflective layer from the translucent substrate is suppressed. A semiconductor light-emitting device includes a first metal layer disposed in contact with a second principal surface of a translucent substrate, a second metal layer disposed in contact with at least the second principal surface or a side surface of the translucent substrate around the first metal layer, and a third metal layer disposed on the second metal layer. The first metal layer has a reflectance with respect to a peak wavelength of light emitted from an emitting layer higher than the reflectance of the second metal layer. The second metal layer has an adhesion with respect to the translucent substrate higher than the adhesion between the first metal layer and the translucent substrate.
Public/Granted literature
- US20140103379A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2014-04-17
Information query
IPC分类: