Invention Grant
- Patent Title: Light emitting diode with a temperature detecting pattern and manufacturing method thereof
- Patent Title (中): 具有温度检测图案的发光二极管及其制造方法
-
Application No.: US13419490Application Date: 2012-03-14
-
Publication No.: US08878222B2Publication Date: 2014-11-04
- Inventor: Chen-Yu Chen
- Applicant: Chen-Yu Chen
- Applicant Address: CN Guangzhou TW Taipei
- Assignee: Lite-On Electronics (Guangzhou) Limited,Lite-On Technology Corporation
- Current Assignee: Lite-On Electronics (Guangzhou) Limited,Lite-On Technology Corporation
- Current Assignee Address: CN Guangzhou TW Taipei
- Agency: Li & Cai Intellectual Property (USA) Office
- Priority: CN200910037331 20090218
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/15 ; G01K13/10 ; G01K7/18 ; H01L33/64
Abstract:
A light emitting diode (LED) includes a substrate, a temperature detecting pattern, and a semiconductor structure. The temperature detecting pattern is formed on the substrate. Then the semiconductor structure is formed on the temperature detecting pattern and the substrate. The semiconductor structure includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer. Per above-mentioned structural design, the temperature detecting pattern directly integrated into the LED can measure the actual temperature of PN junction with high precision.
Public/Granted literature
- US20120168813A1 LIGHT EMITTING DIODE WITH A TEMPERATURE DETECTING PATTERN AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-07-05
Information query
IPC分类:
