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US08878233B2 Compound semiconductor devices and methods of fabricating the same 有权
复合半导体器件及其制造方法

Compound semiconductor devices and methods of fabricating the same
Abstract:
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
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