Invention Grant
- Patent Title: Compound semiconductor devices and methods of fabricating the same
- Patent Title (中): 复合半导体器件及其制造方法
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Application No.: US13880706Application Date: 2011-10-26
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Publication No.: US08878233B2Publication Date: 2014-11-04
- Inventor: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- Applicant: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- Applicant Address: KR Gyeongsankbuk-do
- Assignee: LG Siltron Inc.
- Current Assignee: LG Siltron Inc.
- Current Assignee Address: KR Gyeongsankbuk-do
- Agency: Lewis Roca Rothgerber LLP
- Priority: KR10-2010-0104552 20101026
- International Application: PCT/KR2011/008009 WO 20111026
- International Announcement: WO2012/057512 WO 20120503
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/02 ; H01L21/02 ; H01L33/12 ; H01L21/36 ; H01L29/06 ; B82Y40/00

Abstract:
Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
Public/Granted literature
- US20130285013A1 COMPOUND SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME Public/Granted day:2013-10-31
Information query
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