In an embodiment, a semiconductor device is provided. The semiconductor device may include a substrate having a main processing surface, a first source/drain region comprising a first material of a first conductivity type, a second source/drain region comprising a second material of a second conductivity type, wherein the second conductivity type is different from the first conductivity type, a body region electrically coupled between the first source/drain region and the second source/drain region, wherein the body region extends deeper into the substrate than the first source/drain region in a first direction that is perpendicular to the main processing surface of the substrate, a gate dielectric disposed over the body region, and a gate region disposed over the gate dielectric, wherein the gate region overlaps with at least a part of the first source/drain region and with a part of the body region in the first direction.