Invention Grant
- Patent Title: Method for heteroepitaxial growth of high channel conductivity and high breakdown voltage nitrogen polar high electron mobility transistors
- Patent Title (中): 高通道电导率和高击穿电压氮极性高电子迁移率晶体管的异质外延生长方法
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Application No.: US13861808Application Date: 2013-04-12
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Publication No.: US08878249B2Publication Date: 2014-11-04
- Inventor: Jing Lu , Stacia Keller , Umesh K. Mishra
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/338
Abstract:
A method for growing high mobility, high charge Nitrogen polar (N-polar) or Nitrogen face (In,Al,Ga)N/GaN High Electron Mobility Transistors (HEMTs). The method can provide a successful approach to increase the breakdown voltage and reduce the gate leakage of the N-polar HEMTs, which has great potential to improve the N-polar or N-face HEMTs' high frequency and high power performance.
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