Invention Grant
- Patent Title: Semiconductor devices
- Patent Title (中): 半导体器件
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Application No.: US13099482Application Date: 2011-05-03
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Publication No.: US08878253B2Publication Date: 2014-11-04
- Inventor: Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
- Applicant: Hong-Soo Kim , Hwa-Kyung Shin , Moo-Kyung Lee , Jong-Ho Lim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Onello & Mello, LLP
- Priority: KR10-2010-0055847 20100614
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L27/115 ; H01L21/28 ; H01L29/788 ; H01L29/423
Abstract:
A semiconductor device and method of manufacturing a semiconductor device include a plurality of first active regions and a second active region being formed on a substrate. The second active region is formed between two of the first active regions. A plurality of gate structures is formed on respective first active regions. A dummy gate structure is formed on the second active region, and a first voltage is applied to the dummy gate structure.
Public/Granted literature
- US20110303965A1 SEMICONDUCTOR DEVICES Public/Granted day:2011-12-15
Information query
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