Invention Grant
- Patent Title: Semiconductor device, method for manufacturing same, and solid-state image sensing device
- Patent Title (中): 半导体装置及其制造方法以及固体摄像装置
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Application No.: US12784639Application Date: 2010-05-21
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Publication No.: US08878263B2Publication Date: 2014-11-04
- Inventor: Shuji Manda
- Applicant: Shuji Manda
- Applicant Address: JP
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP
- Agency: Sheridan Ross P.C.
- Priority: JP2009-140530 20090611
- Main IPC: H01L31/0224
- IPC: H01L31/0224 ; H01L27/146 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.
Public/Granted literature
- US20100314672A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SOLID-STATE IMAGE SENSING DEVICE Public/Granted day:2010-12-16
Information query
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