Invention Grant
- Patent Title: CMOS image sensor and method for fabricating the same
- Patent Title (中): CMOS图像传感器及其制造方法
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Application No.: US13599721Application Date: 2012-08-30
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Publication No.: US08878266B2Publication Date: 2014-11-04
- Inventor: Youn-Sub Lim
- Applicant: Youn-Sub Lim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2012-0073964 20120706
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L31/18
Abstract:
A CMOS image sensor includes a substrate, a gate electrode formed over the substrate, a photodiode formed over the substrate to be substantially aligned with one side of the gate electrode, a floating diffusion region formed over the substrate to be substantially aligned with the other side of the gate electrode, and a blooming pass region formed below the photodiode.
Public/Granted literature
- US20140008708A1 CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2014-01-09
Information query
IPC分类:
