Invention Grant
US08878272B2 Semiconductor device having stacked storage nodes of capacitors in cell region separated from peripheral region
有权
半导体器件具有在与周边区域分离的单元区域中的电容器的堆叠存储节点
- Patent Title: Semiconductor device having stacked storage nodes of capacitors in cell region separated from peripheral region
- Patent Title (中): 半导体器件具有在与周边区域分离的单元区域中的电容器的堆叠存储节点
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Application No.: US13337481Application Date: 2011-12-27
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Publication No.: US08878272B2Publication Date: 2014-11-04
- Inventor: Jun Ki Kim
- Applicant: Jun Ki Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2011-0013457 20110215
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/02 ; H01L49/02 ; H01L21/768
Abstract:
Methods of fabricating a semiconductor device are provided. The method includes forming a first mold layer on a in a cell region and a peripheral region, forming first storage nodes penetrating the first mold layer in the cell region and a first contact penetrating the first mold layer in the peripheral region, forming a second mold layer on the first mold layer, forming second storage nodes that penetrate the second mold layer to be connected to respective ones of the first storage nodes, removing the second mold layer in the cell and peripheral regions and the first mold layer in the cell region to leave the first mold layer in the peripheral region, and forming a second contact that penetrates a first interlayer insulation layer to be connected to the first contact. Related devices are also provided.
Public/Granted literature
- US20120205779A1 SEMICONDUCTOR DEVICES INCLUDING CAPACITORS AND METAL CONTACTS, AND METHODS OF FABRICATING THE SAME Public/Granted day:2012-08-16
Information query
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