Invention Grant
- Patent Title: Multi-resistive integrated circuit memory
- Patent Title (中): 多电阻集成电路存储器
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Application No.: US13345417Application Date: 2012-01-06
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Publication No.: US08878274B2Publication Date: 2014-11-04
- Inventor: R. Jacob Baker , Kurt D. Beigel
- Applicant: R. Jacob Baker , Kurt D. Beigel
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L49/02 ; G11C5/04 ; G11C11/15 ; H01L23/522 ; H01L27/08 ; H01L27/02
Abstract:
A capacitor for use in integrated circuits comprises a layer of conductive material. The layer of conductive material including at least a first portion and a second portion, wherein the first portion and the second portion are arranged in a predetermined pattern relative to one another to provide a maximum amount of capacitance per semiconductor die area.
Public/Granted literature
- US20120099366A1 MULTI-RESISTIVE INTEGRATED CIRCUIT MEMORY Public/Granted day:2012-04-26
Information query
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