Invention Grant
US08878278B2 Compact three dimensional vertical NAND and method of making thereof
有权
紧凑型三维垂直NAND及其制作方法
- Patent Title: Compact three dimensional vertical NAND and method of making thereof
- Patent Title (中): 紧凑型三维垂直NAND及其制作方法
-
Application No.: US13754293Application Date: 2013-01-30
-
Publication No.: US08878278B2Publication Date: 2014-11-04
- Inventor: Johann Alsmeier , Raghuveer S. Makala , Xiying Costa , Yanli Zhang
- Applicant: SanDisk Technologies, Inc.
- Applicant Address: US TX Plano
- Assignee: Sandisk Technologies Inc.
- Current Assignee: Sandisk Technologies Inc.
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L21/84
- IPC: H01L21/84 ; H01L27/115 ; G11C16/04 ; H01L29/788 ; H01L29/66 ; H01L29/792 ; H01L21/764
Abstract:
A NAND device has at least a 3×3 array of vertical NAND strings in which the control gate electrodes are continuous in the array and do not have an air gap or a dielectric filled trench in the array. The NAND device is formed by first forming a lower select gate level having separated lower select gates, then forming plural memory device levels containing a plurality of NAND string portions, and then forming an upper select gate level over the memory device levels having separated upper select gates.
Public/Granted literature
- US20130248974A1 COMPACT THREE DIMENSIONAL VERTICAL NAND AND METHOD OF MAKING THEREOF Public/Granted day:2013-09-26
Information query
IPC分类:
