Invention Grant
- Patent Title: Self-aligned floating gate in a vertical memory structure
- Patent Title (中): 垂直存储器结构中的自对准浮动栅极
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Application No.: US13711974Application Date: 2012-12-12
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Publication No.: US08878279B2Publication Date: 2014-11-04
- Inventor: Randy J. Koval
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Cool Patent, P.C.
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/28 ; G11C16/04
Abstract:
A memory device or electronic system may include a memory cell body extending from a substrate, a self-aligned floating gate separated from the memory cell body by a tunneling dielectric film, and a control gate separated from the self-aligned floating gate by a blocking dielectric film. The floating gate is flanked by the memory cell body and the control gate to form a memory cell, and the self-aligned floating gate is at least as thick as the control gate. Methods for building such a memory device are also disclosed.
Public/Granted literature
- US20140160841A1 SELF-ALIGNED FLOATING GATE IN A VERTICAL MEMORY STRUCTURE Public/Granted day:2014-06-12
Information query
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