Invention Grant
- Patent Title: Flash memory device and method for manufacturing the same
- Patent Title (中): 闪存装置及其制造方法
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Application No.: US13148265Application Date: 2011-02-24
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Publication No.: US08878280B2Publication Date: 2014-11-04
- Inventor: Huilong Zhu , Haizhou Yin , Zhijiong Luo
- Applicant: Huilong Zhu , Haizhou Yin , Zhijiong Luo
- Applicant Address: CN Beijing
- Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee: Institute of Microelectronics, Chinese Academy of Sciences
- Current Assignee Address: CN Beijing
- Agency: Goodwin Procter LLP
- Priority: CN201010296053 20100928
- International Application: PCT/CN2011/071248 WO 20110224
- International Announcement: WO2012/041035 WO 20120405
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L27/115 ; H01L29/66 ; H01L21/84 ; H01L27/12
Abstract:
The present invention provides a FinFET flash memory device and the method for manufacturing the same. The flash memory device is on an insulating layer, comprising: a first fin and a second fin, wherein the second fin is a control gate of the device; a gate dielectric layer, at side walls and top of the first fin and the second fin; source/drain regions, inside the first fin at both sides of a floating gate.
Public/Granted literature
- US20120112261A1 FLASH MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2012-05-10
Information query
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