Invention Grant
- Patent Title: Nonvolatile semiconductor storage device and method of manufacture thereof
- Patent Title (中): 非易失性半导体存储装置及其制造方法
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Application No.: US14030811Application Date: 2013-09-18
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Publication No.: US08878282B2Publication Date: 2014-11-04
- Inventor: Toshitake Yaegashi
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-285516 20081106
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L27/115 ; H01L21/28 ; H01L29/423
Abstract:
A nonvolatile semiconductor storage device including a number of memory cells formed on a semiconductor substrate, each of the memory cells has a tunnel insulating film, a charge storage layer, a block insulating film, and a gate electrode which are formed in sequence on the substrate. The gate electrode is structured such that at least first and second gate electrode layers are stacked. The dimension in the direction of gate length of the second gate electrode layer, which is formed on the first gate electrode layer, is smaller than the dimension in the direction of gate length of the first gate electrode layer.
Public/Granted literature
- US20140015033A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2014-01-16
Information query
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