Invention Grant
US08878285B2 Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device
有权
每个包括它们的垂直半导体器件，模块和系统以及用于制造垂直半导体器件的方法
- Patent Title: Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device
- Patent Title (中): 每个包括它们的垂直半导体器件，模块和系统以及用于制造垂直半导体器件的方法
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Application No.: US13719090Application Date: 2012-12-18
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Publication No.: US08878285B2Publication Date: 2014-11-04
- Inventor: Seong Wan Ryu , Min Soo Yoo
- Applicant: SK Hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0077259 20120716
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L27/108 ; H01L29/10 ; H01L29/06
Abstract:
A vertical semiconductor device having a vertical channel region is disclosed. The vertical semiconductor device includes a pillar having a vertical channel region, a bit line buried in a semiconductor substrate located at a lower part of the pillar, and a body connection unit configured to couple at least one sidewall of the pillar to the semiconductor substrate. As a result, the floating body effect of the vertical semiconductor device can be more effectively removed.
Public/Granted literature
Information query
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