Invention Grant
- Patent Title: Semiconductor device with enhanced mobility and method
- Patent Title (中): 具有增强的移动性和方法的半导体器件
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Application No.: US13895197Application Date: 2013-05-15
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Publication No.: US08878286B2Publication Date: 2014-11-04
- Inventor: Gordon M. Grivna , Zia Hossain , Kirk K. Huang , Balaji Padmanabhan , Francine Y. Robb , Prasad Venkatraman
- Applicant: Gordon M. Grivna , Zia Hossain , Kirk K. Huang , Balaji Padmanabhan , Francine Y. Robb , Prasad Venkatraman
- Applicant Address: US AZ Phoenix
- Assignee: Semiconductor Components Industries, LLC
- Current Assignee: Semiconductor Components Industries, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/45 ; H01L29/40 ; H01L29/423 ; H01L29/08 ; H01L29/417
Abstract:
In one embodiment, a vertical insulated-gate field effect transistor includes a feature embedded within a control electrode. The feature is placed within the control electrode to induce stress within predetermined regions of the transistor.
Public/Granted literature
- US20130248982A1 SEMICONDUCTOR DEVICE WITH ENHANCED MOBILITY AND METHOD Public/Granted day:2013-09-26
Information query
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