Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13708905Application Date: 2012-12-07
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Publication No.: US08878289B2Publication Date: 2014-11-04
- Inventor: Kyung Do Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2011-0130830 20111208
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/108 ; H01L29/78 ; H01L21/762
Abstract:
In the semiconductor device, a line-type buried gate is formed by burying a non-operating gate (isolation gate) with a polysilicon material to reduce a work function and a Gate Induced Drain Leakage (GIDL) caused by the non-operating gate, resulting in improvement of refresh characteristics of the semiconductor device. Operating gates including a metal conductive material may be formed in a separate step.
Public/Granted literature
- US20130146968A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2013-06-13
Information query
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