Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13714310Application Date: 2012-12-13
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Publication No.: US08878291B2Publication Date: 2014-11-04
- Inventor: Yong Sun Jung
- Applicant: SK Hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2012-0083218 20120730
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/112
Abstract:
A semiconductor device includes a first buried gate structure in a peripheral circuit area of a semiconductor substrate, and a second gate structure formed on the semiconductor substrate. A gate insulating layer of a program transistor is thinly formed to be easily ruptured, and a gate insulating layer of a select transistor is thickly formed to improve reliability of the select transistor.
Public/Granted literature
- US20140027844A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-01-30
Information query
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