Invention Grant
US08878301B2 Semiconductor device with transistors having different source/drain region depths
有权
具有晶体管的半导体器件具有不同的源极/漏极区域深度
- Patent Title: Semiconductor device with transistors having different source/drain region depths
- Patent Title (中): 具有晶体管的半导体器件具有不同的源极/漏极区域深度
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Application No.: US13186163Application Date: 2011-07-19
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Publication No.: US08878301B2Publication Date: 2014-11-04
- Inventor: Yuichi Hirano
- Applicant: Yuichi Hirano
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: JP2010-201885 20100909
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/8238 ; H01L21/8234
Abstract:
A semiconductor device includes core transistors for forming a logic circuit, and I/O transistors for forming an input/output circuit. A distance from the main surface to a lowermost part of an n-type impurity region NR of the I/O n-type transistor is longer than that from the main surface to a lowermost part of an n-type impurity region NR of the core n-type transistor. A distance from the main surface to a lowermost part of a p-type impurity region PR of the I/O p-type transistor is longer than that from the main surface to a lowermost part of a p-type impurity region of the core p-type transistor. A distance from the main surface to the lowermost part of the n-type impurity region of the I/O n-type transistor is longer than that from the main surface to the lowermost part of the p-type impurity region of the I/O p-type transistor.
Public/Granted literature
- US20120061767A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2012-03-15
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