Invention Grant
US08878302B2 Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer
有权
具有SiGe衬底，界面层和高K电介质层的半导体器件
- Patent Title: Semiconductor device having SiGe substrate, interfacial layer and high K dielectric layer
- Patent Title (中): 具有SiGe衬底，界面层和高K电介质层的半导体器件
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Application No.: US13706081Application Date: 2012-12-05
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Publication No.: US08878302B2Publication Date: 2014-11-04
- Inventor: Chao-Ching Cheng , Ji-Yin Tsai , Cheng-Hsien Wu , Chih-Hsin Ko , Clement Hsingjen Wann
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/66 ; H01L29/78
Abstract:
The invention relates to integrated circuit fabrication, and more particularly to a semiconductor device with an interfacial layer. An exemplary structure for a semiconductor device comprises a Si1-xGex substrate, wherein the x is greater than 0.4; a Si layer over the Si1-xGex substrate; and a gate structure disposed over the Si layer, wherein the gate structure comprises a dielectric portion and an electrode portion that is disposed over the dielectric portion; wherein the dielectric portion comprises a layer of III-V material on the Si layer and a high-k dielectric layer adjacent to the electrode portion.
Public/Granted literature
- US20140151819A1 Semiconductor Device Having SiGe Substrate, Interfacial Layer and High K Dielectric Layer Public/Granted day:2014-06-05
Information query
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