Invention Grant
- Patent Title: Magnetic tunnel junction device and method for fabricating the same
- Patent Title (中): 磁隧道结装置及其制造方法
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Application No.: US13336524Application Date: 2011-12-23
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Publication No.: US08878319B2Publication Date: 2014-11-04
- Inventor: Won Joon Choi
- Applicant: Won Joon Choi
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2011-0069464 20110713
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/02 ; H01L43/12 ; H01L43/08
Abstract:
A magnetic tunnel junction device includes a first electrode having a curved top surface, a magnetic tunnel junction layer formed along the top surface of the first electrode, and a second electrode formed on the magnetic tunnel junction layer.
Public/Granted literature
- US20130015540A1 MAGNETIC TUNNEL JUNCTION DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2013-01-17
Information query
IPC分类:
