Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US13425328Application Date: 2012-03-20
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Publication No.: US08878320B2Publication Date: 2014-11-04
- Inventor: Koji Yamakawa , Daisuke Ikeno , Yasuki Sonoda
- Applicant: Koji Yamakawa , Daisuke Ikeno , Yasuki Sonoda
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Priority: JP2011-141056 20110624
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/08 ; H01L27/22
Abstract:
According to one embodiment, a semiconductor memory device includes plural magneto-resistance elements being two-dimensionally arrayed on a semiconductor substrate. In the semiconductor memory device, each of the magneto-resistance elements includes: a first magnetic layer formed on the semiconductor substrate; a non-magnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the non-magnetic layer, and an insulating film buried between the magneto-resistance elements adjacent to each other, a powder made of a metallic material or a magnetic material being dispersed in the insulating film.
Public/Granted literature
- US20120326251A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2012-12-27
Information query
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