Invention Grant
US08878327B2 Schottky barrier device having a plurality of double-recessed trenches 有权
具有多个双凹槽的肖特基势垒器件

Schottky barrier device having a plurality of double-recessed trenches
Abstract:
A Schottky barrier device includes a semiconductor substrate, a first contact metal layer, a second contact metal layer and an insulating layer. The semiconductor substrate has a first surface, and plural trenches are formed on the first surface. Each trench includes a first recess having a first depth and a second recess having a second depth. The second recess extends down from the first surface while the first recess extends down from the second recess. The first contact metal layer is formed on the second recess. The second contact metal layer is formed on the first surface between two adjacent trenches. The insulating layer is formed on the first recess. A first Schottky barrier formed between the first contact metal layer and the semiconductor substrate is larger than a second Schottky barrier formed between the second contact metal layer and the semiconductor substrate.
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