Invention Grant
- Patent Title: Schottky barrier device having a plurality of double-recessed trenches
- Patent Title (中): 具有多个双凹槽的肖特基势垒器件
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Application No.: US13730649Application Date: 2012-12-28
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Publication No.: US08878327B2Publication Date: 2014-11-04
- Inventor: Cheng-Tyng Yen , Young-Shying Chen , Chien-Chung Hung , Chwan-Ying Lee
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Muncy, Geissler & Olds & Lowe, P.C.
- Priority: TW101123086A 20120627
- Main IPC: H01L27/095
- IPC: H01L27/095 ; H01L29/47 ; H01L29/812 ; H01L31/07 ; H01L29/04 ; H01L31/036 ; H01L31/108 ; H01L29/80 ; H01L31/112 ; H01L31/00 ; H01L29/66 ; H01L29/872

Abstract:
A Schottky barrier device includes a semiconductor substrate, a first contact metal layer, a second contact metal layer and an insulating layer. The semiconductor substrate has a first surface, and plural trenches are formed on the first surface. Each trench includes a first recess having a first depth and a second recess having a second depth. The second recess extends down from the first surface while the first recess extends down from the second recess. The first contact metal layer is formed on the second recess. The second contact metal layer is formed on the first surface between two adjacent trenches. The insulating layer is formed on the first recess. A first Schottky barrier formed between the first contact metal layer and the semiconductor substrate is larger than a second Schottky barrier formed between the second contact metal layer and the semiconductor substrate.
Public/Granted literature
- US20140001489A1 DOUBLE-RECESSED TRENCH SCHOTTKY BARRIER DEVICE Public/Granted day:2014-01-02
Information query
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