Invention Grant
- Patent Title: Semiconductor bonding structure and process
- Patent Title (中): 半导体结合结构和工艺
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Application No.: US13660374Application Date: 2012-10-25
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Publication No.: US08878355B2Publication Date: 2014-11-04
- Inventor: Kuei-Sung Chang , Nien-Tsung Tsai , Ting-Hau Wu , Yi Heng Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/02 ; H01L23/22 ; H01L23/24
Abstract:
A system and method for bonding semiconductor devices is provided. An embodiment comprises halting the flow of a eutectic bonding material by providing additional material of one of the reactants in a grid pattern, such that, as the eutectic material flows into the additional material, the additional material will change the composition of the flowing eutectic material and solidify the material, thereby stopping the flow. Other embodiments provide for additional layouts to put the additional material into the path of the flowing eutectic material.
Public/Granted literature
- US20140117510A1 Semiconductor Bonding Structure and Process Public/Granted day:2014-05-01
Information query
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