Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13457051Application Date: 2012-04-26
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Publication No.: US08878358B2Publication Date: 2014-11-04
- Inventor: Isao Sugaya
- Applicant: Isao Sugaya
- Applicant Address: JP Tokyo
- Assignee: Nikon Corporation
- Current Assignee: Nikon Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner Ltd
- Priority: JP2007-055354 20070306; JP2007-091082 20070330
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/433 ; H01L25/18 ; H01L23/427

Abstract:
Between a logic LSI (4) arranged on one side of a DRAM (1) and jointed to the DRAM and a radiating member (6) arranged on the other side of the DRAM (1) for irradiating the heats of the DRAM (1) and the logic LSI (4), there is disposed a heat bypass passage (5), which extends inbetween while bypassing the DRAM (1). Thus, it is possible to provide a semiconductor device, which can irradiate the heat generated from the logic LSI such as CPU or GPU thereby to reduce the temperature rise and the temperature distribution.
Public/Granted literature
- US20120205792A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-08-16
Information query
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