Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13864923Application Date: 2013-04-17
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Publication No.: US08878371B2Publication Date: 2014-11-04
- Inventor: Shoji Seta , Hideaki Ikuma
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Sprinkle IP Law Group
- Priority: JP2010-127947 20100603
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/498 ; H01L23/528 ; H01L23/00 ; H01L23/31 ; H01L23/525
Abstract:
A semiconductor device has a semiconductor substrate which has a plurality of pad electrodes provided on a top surface thereof and has an approximately rectangular shape; a rewiring layer which is provided with a plurality of contact wiring lines connected to the plurality of pad electrodes, is disposed on the semiconductor substrate through an insulating film, and has an approximately rectangular shape; and a plurality of ball electrodes which are provided on the rewiring layer.
Public/Granted literature
- US20130256886A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-10-03
Information query
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