Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US13204297Application Date: 2011-08-05
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Publication No.: US08878551B2Publication Date: 2014-11-04
- Inventor: Masanobu Oomura
- Applicant: Masanobu Oomura
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2010-197145 20100902
- Main IPC: G01R27/28
- IPC: G01R27/28 ; H01L23/00

Abstract:
A semiconductor integrated circuit device comprises: a circuit block formed on a semiconductor substrate; an electrically conductive pattern formed over a portion to be protected of the block; a resetting unit configured to reset a potential of a portion of the pattern to a reference potential; a connecting unit configured to connect the portion to a current supply line; and a detection circuit configured to determine whether a preset range includes a voltage of the portion when a predetermined time has elapsed since the portion is connected to the current supply line after the potential of the portion is reset to the reference potential is provided. A change in voltage of the portion depends on a circuit constant of the pattern.
Public/Granted literature
- US20120056629A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2012-03-08
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