Invention Grant
- Patent Title: High frequency probing structure
- Patent Title (中): 高频探测结构
-
Application No.: US12982541Application Date: 2010-12-30
-
Publication No.: US08878560B2Publication Date: 2014-11-04
- Inventor: Ying-Hsin Kuo , Wensen Hung
- Applicant: Ying-Hsin Kuo , Wensen Hung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/00
- IPC: G01R31/00 ; G01R31/28 ; G01R1/073 ; G01R1/067

Abstract:
The present disclosure provide a probe card for wafer level testing. The probe card includes a space transformer having a power line, a ground line, and signal lines embedded therein, wherein the space transformer includes various conductive lines having a first pitch on a first surface and a second pitch on a second surface, the second pitch being substantially less than the first pitch; a printed circuit board configured approximate the first surface of the space transformer; and a power plane disposed on the first surface of the space transformer and patterned to couple the power line and the ground line of the space transformer to the printed circuit board.
Public/Granted literature
- US20120169367A1 HIGH FREQUENCY PROBING STRUCTURE Public/Granted day:2012-07-05
Information query