Invention Grant
- Patent Title: High-frequency amplifier
- Patent Title (中): 高频放大器
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Application No.: US13540972Application Date: 2012-07-03
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Publication No.: US08878611B2Publication Date: 2014-11-04
- Inventor: Tomohiro Senjiyuu
- Applicant: Tomohiro Senjiyuu
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-207441 20110922
- Main IPC: H03F3/16
- IPC: H03F3/16

Abstract:
According to one embodiment, a high-frequency amplifier is provided with a field effect transistor for performing amplification, and a stabilizing circuit. The field effect transistor has a source which is configured to be grounded. The stabilizing circuit is connected to a gate of the field effect transistor. The stabilizing circuit has impedance which changes so as to increase as the voltage of a drain of the field effect transistor increases.
Public/Granted literature
- US20130076441A1 HIGH-FREQUENCY AMPLIFIER Public/Granted day:2013-03-28
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