Invention Grant
- Patent Title: Phase change memory word line driver
- Patent Title (中): 相变存储器字线驱动器
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Application No.: US13973600Application Date: 2013-08-22
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Publication No.: US08879311B2Publication Date: 2014-11-04
- Inventor: Hong Beom Pyeon
- Applicant: Mosaid Technologies Incorporated
- Applicant Address: CA Ottawa
- Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee: Conversant Intellectual Property Management Inc.
- Current Assignee Address: CA Ottawa
- Agent Dennis R. Haszko
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00 ; G11C8/08 ; G11C8/14

Abstract:
A method for improving sub-word line response comprises generating a variable substrate bias determined by at least one user parameter. The variable substrate bias is applied to a sub-word line driver in a selected sub-block of a memory. A voltage disturbance on a sub-word line in communication with the sub-word line driver is minimized by modifying a variable substrate bias of the sub-word line driver to change a transconductance of the sub-word line driver thereby.
Public/Granted literature
- US20130336055A1 PHASE CHANGE MEMORY WORD LINE DRIVER Public/Granted day:2013-12-19
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