Provided is a storage element including a storage layer that holds information according to a magnetization state of a magnetic body, a magnetization fixing layer that has magnetization serving as a reference of the information stored in the storage layer, and an insulation layer that is formed of a non-magnetic body disposed between the storage layer and the magnetization fixing layer. The information is stored by reversing the magnetization of the storage layer using spin torque magnetization reversal occurring with a current flowing in a lamination direction of a layer configuration of the storage layer, the insulation layer, and the magnetization fixing layer, and a size of the storage layer is less than a size in which a direction of the magnetization is simultaneously changed.