Invention Grant
US08879316B2 Semiconductor device and method of generating voltages using the same
有权
半导体装置及使用该装置产生电压的方法
- Patent Title: Semiconductor device and method of generating voltages using the same
- Patent Title (中): 半导体装置及使用该装置产生电压的方法
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Application No.: US13338897Application Date: 2011-12-28
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Publication No.: US08879316B2Publication Date: 2014-11-04
- Inventor: Bon Kwang Koo
- Applicant: Bon Kwang Koo
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0139182 20101230
- Main IPC: G11C11/34
- IPC: G11C11/34 ; G11C16/04 ; G11C16/12 ; G11C5/14 ; G11C8/08

Abstract:
A semiconductor device includes a register unit for storing additional bits associated with a command signal and outputting a selected additional bit corresponding to a received address; a combination circuit for combining received control bits and the selected additional bit, and outputting enable signals based on the combined bits, where the received control bits are generated in response to the command signal and a control signal; and a voltage generation circuit for outputting voltages distributed in response to the enable signals.
Public/Granted literature
- US20120170367A1 SEMICONDUCTOR DEVICE AND METHOD OF GENERATING VOLTAGES USING THE SAME Public/Granted day:2012-07-05
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