Invention Grant
- Patent Title: Sense amplifier column redundancy
- Patent Title (中): 感应放大器列冗余
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Application No.: US13837874Application Date: 2013-03-15
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Publication No.: US08879328B2Publication Date: 2014-11-04
- Inventor: Chulmin Jung
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Haynes and Boone, LLP
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C7/08 ; G11C16/04 ; G11C11/56 ; G11C16/26
Abstract:
A memory includes a redundant sense amplifier and a plurality of sense amplifier pairs. Each sense amplifier pair includes a first sense amplifier and a second sense amplifier. Each sense amplifier pair drives a common load line. The memory is configured to implement column redundancy using a single redundant sense amplifier without requiring local read lines for each sense amplifier.
Public/Granted literature
- US20140269104A1 Sense Amplifier Column Redundancy Public/Granted day:2014-09-18
Information query
