A semiconductor device avoids the disturb problem and the collision between write and read operations in a DP-SRAM cell or a 2P-SRAM cell. The semiconductor device 1 includes a write word line WLA and a read word line WLB each coupled to memory cells 3. A read operation activates the read word line WLB corresponding to the selected memory cell 3. A write operation activates the write word line WLA corresponding to the selected memory cell 3. The selected write word line WLA is activated after activation of the selected read word line WLB in an operation cycle that performs both read and write operations.