Invention Grant
US08879338B2 Semiconductor integrated circuit and nonvolatile semiconductor storage device
有权
半导体集成电路和非易失性半导体存储器件
- Patent Title: Semiconductor integrated circuit and nonvolatile semiconductor storage device
- Patent Title (中): 半导体集成电路和非易失性半导体存储器件
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Application No.: US13954854Application Date: 2013-07-30
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Publication No.: US08879338B2Publication Date: 2014-11-04
- Inventor: Yoshiharu Hirata
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2013-015993 20130130
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G05F1/10 ; G11C16/06

Abstract:
A semiconductor integrated circuit according to an embodiment includes an oscillator that generates and outputs an oscillation signal in an active state and generates no oscillation signal in an inactive state. The semiconductor integrated circuit includes a negative charge pump that generates an output voltage that is a negative voltage in response to the oscillation signal and outputs the output voltage to an output pad. The semiconductor integrated circuit includes a negative voltage detecting circuit that detects the output voltage and controls the oscillator to be in the active state or inactive state so as to bring the output voltage close to a target voltage.
Public/Granted literature
- US20140211560A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2014-07-31
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