Invention Grant
- Patent Title: Flash memory device and method for handling power failure thereof
- Patent Title (中): 闪存装置及其处理电源故障的方法
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Application No.: US13453495Application Date: 2012-04-23
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Publication No.: US08879347B2Publication Date: 2014-11-04
- Inventor: Hung-Chiang Chen
- Applicant: Hung-Chiang Chen
- Applicant Address: TW Jhubei
- Assignee: Silicon Motion, Inc.
- Current Assignee: Silicon Motion, Inc.
- Current Assignee Address: TW Jhubei
- Agency: Wang Law Firm, Inc.
- Agent Li K. Wang; Stephen Hsu
- Priority: TW100114231A 20110425
- Main IPC: G11C5/14
- IPC: G11C5/14 ; G11C16/22
Abstract:
A flash memory device. In one embodiment, the flash memory device comprises a flash memory, a diode, a controller, and a capacitor. The flash memory has a voltage source pin. The diode is coupled between a voltage source and the voltage source pin of the flash memory. The controller is coupled to the flash memory via a data bus. The capacitor is coupled between the voltage source pin of the flash memory and a ground, and supplies power to the flash memory to enable the flash memory to complete writing of at least one data page when the level of the voltage source is lowered.
Public/Granted literature
- US20120268998A1 Flash Memory Device and Method for Handling Power Failure Thereof Public/Granted day:2012-10-25
Information query
