Invention Grant
- Patent Title: Memory array including multi-state memory devices
- Patent Title (中): 存储阵列包括多状态存储器件
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Application No.: US13277837Application Date: 2011-10-20
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Publication No.: US08880782B2Publication Date: 2014-11-04
- Inventor: Erik Ordentlich , Ron M. Roth , Gadiel Seroussi
- Applicant: Erik Ordentlich , Ron M. Roth , Gadiel Seroussi
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Development Company, L. P.
- Current Assignee: Hewlett Packard Development Company, L. P.
- Current Assignee Address: US TX Houston
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G11C13/00 ; G11C11/56 ; G11C7/10 ; G11C16/00

Abstract:
A data storage system including a memory array including a plurality of memory devices programmable in greater than two states. A memory control module may control operations of the memory array, and an encoder module may encode input data for storing to the memory array. The memory array may be an m×n memory array, and the memory control module may control operations of storing data to and retrieving data from the memory array.
Public/Granted literature
- US20130103888A1 MEMORY ARRAY INCLUDING MULTI-STATE MEMORY DEVICES Public/Granted day:2013-04-25
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