Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US13739562Application Date: 2013-01-11
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Publication No.: US08880846B2Publication Date: 2014-11-04
- Inventor: Hiroyuki Nakajima , Shigeyuki Ueno
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-020046 20120201
- Main IPC: G06F12/10
- IPC: G06F12/10 ; H04L1/00 ; H03M13/29 ; H03M13/00 ; G06F12/02 ; H03M13/41 ; G06F9/34

Abstract:
A semiconductor device according to the present invention includes a first address generation unit that includes a first register group and generates a table address by a cyclically repeating first pattern using a value stored to the first register group, a second address generation unit that includes a second register group and generates an access address by a cyclically repeating second pattern using a value stored to the second register group and parameter information determined by the table address, and a control unit that outputs setting information to be supplied to the first register group and the second register group. Further, the semiconductor device performs at least one of a read process and a write process of data from and to a data memory using the access address.
Public/Granted literature
- US20130198486A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-08-01
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