Invention Grant
- Patent Title: Memory system
- Patent Title (中): 内存系统
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Application No.: US13599035Application Date: 2012-08-30
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Publication No.: US08880900B2Publication Date: 2014-11-04
- Inventor: Hyoung-Suk Jang , Hee-Chang Cho , Min-Wook Kim
- Applicant: Hyoung-Suk Jang , Hee-Chang Cho , Min-Wook Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2011-0115904 20111108
- Main IPC: G06F11/30
- IPC: G06F11/30 ; G06F21/34

Abstract:
A memory system comprises: a memory device including an authentication data area storing authentication unit information and a verification value, and a contents data area storing contents; and a host device configured to receive the authentication unit information and the verification value from the memory device, and perform secure authentication of the memory device based on whether a result of decoding the verification value is equal to the authentication unit information.
Public/Granted literature
- US20130117566A1 MEMORY SYSTEM Public/Granted day:2013-05-09
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