Invention Grant
- Patent Title: Photolithography mask design simplification
- Patent Title (中): 光刻面膜设计简化
-
Application No.: US13977644Application Date: 2011-12-29
-
Publication No.: US08881071B2Publication Date: 2014-11-04
- Inventor: Vivek K. Singh , Bikram Baidva , Omkar S. Dandekar , Hale Erten
- Applicant: Vivek K. Singh , Bikram Baidva , Omkar S. Dandekar , Hale Erten
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- International Application: PCT/US2011/067955 WO 20111229
- International Announcement: WO2013/101118 WO 20130704
- Main IPC: G06F17/50
- IPC: G06F17/50 ; G03F1/36

Abstract:
A photolithography mask design is simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
Public/Granted literature
- US20140237434A1 PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION Public/Granted day:2014-08-21
Information query