Invention Grant
US08881071B2 Photolithography mask design simplification 有权
光刻面膜设计简化

Photolithography mask design simplification
Abstract:
A photolithography mask design is simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
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