Invention Grant
- Patent Title: Power routing with integrated decoupling capacitance
- Patent Title (中): 具有集成去耦电容的电源布线
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Application No.: US13876303Application Date: 2011-09-28
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Publication No.: US08881087B2Publication Date: 2014-11-04
- Inventor: Sjoerd Herder , Harro Koning
- Applicant: Sjoerd Herder , Harro Koning
- Applicant Address: CH Plan-les-Ouates
- Assignee: ST-Ericsson SA
- Current Assignee: ST-Ericsson SA
- Current Assignee Address: CH Plan-les-Ouates
- Agency: Coats & Bennett, PLLC
- Priority: EP10182111 20100929
- International Application: PCT/EP2011/066831 WO 20110928
- International Announcement: WO2012/041889 WO 20120405
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L23/528 ; H01L21/768 ; H01L23/522

Abstract:
An integrated circuit chip is disclosed having a semiconductor substrate and a plurality of conduction layers (metalz, metalz+1), disposed on the semiconductor substrate and separated by dielectric layers, for distribution of power and electrical signals on the chip. The integrated circuit chip comprises a power-supply distribution network (200) which comprises, in a first one (metalz) of the conduction layers, a first mesh structure (210) of electrically conductive material for distribution of a first electrical potential (POWER) of the power supply. The power-supply distribution network also comprises, in a second one (metalz+1) of the conduction layers, different from the first one of the conduction layers, a second mesh structure (220) of electrically conductive material for distribution of a second electrical potential (GROUND) of the power supply. In the first one (metalz) of the conduction layers, a first plurality of islands (212) of electrically conductive material is provided, each island being located in a hole (214) of the first mesh structure (210) and being electrically insulated from the first mesh structure with a dielectric material.
Public/Granted literature
- US20130181337A1 Power Routing with Integrated Decoupling Capacitance Public/Granted day:2013-07-18
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