Invention Grant
- Patent Title: Semiconductor sensing device to minimize thermal noise
- Patent Title (中): 半导体感测装置,以最小化热噪声
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Application No.: US13361475Application Date: 2012-01-30
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Publication No.: US08881596B2Publication Date: 2014-11-11
- Inventor: Jen-Huang Albert Chiou , Shiuh-Hui Steven Chen
- Applicant: Jen-Huang Albert Chiou , Shiuh-Hui Steven Chen
- Applicant Address: US MI Auburn Hills
- Assignee: Continental Automotive Systems, Inc.
- Current Assignee: Continental Automotive Systems, Inc.
- Current Assignee Address: US MI Auburn Hills
- Main IPC: G01L9/06
- IPC: G01L9/06 ; G01L7/08

Abstract:
An MEMS pressure sensor is designed to reduce or eliminate thermal noise, such as temperature offset voltage output. The pressure sensor includes a pressure sensing element having a diaphragm, and a cavity formed as part of the pressure sensing element, where the cavity receives a fluid such that the diaphragm at least partially deflects. The pressure sensing element also includes a plurality of piezoresistors, which are operable to generate a signal based on the amount of deflection in the diaphragm. At least one trench is integrally formed as part of the pressure sensing element, and an adhesive connects the pressure sensing element to the at least one substrate such that at least a portion of the adhesive is attached to the trench and redistributes thermally induced stresses on the pressure sensing element such that the thermally induced noise is substantially eliminated.
Public/Granted literature
- US20130192378A1 SEMICONDUCTOR SENSING DEVICE TO MINIMIZE THERMAL NOISE Public/Granted day:2013-08-01
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