Invention Grant
- Patent Title: Semiconductor device changing an active time-out time interval
- Patent Title (中): 半导体器件改变主动超时时间间隔
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Application No.: US13137030Application Date: 2011-07-15
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Publication No.: US08885431B2Publication Date: 2014-11-11
- Inventor: Tomoaki Sato
- Applicant: Tomoaki Sato
- Applicant Address: LU Luxembourg
- Assignee: PS4 Luxco S.A.R.L.
- Current Assignee: PS4 Luxco S.A.R.L.
- Current Assignee Address: LU Luxembourg
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2010-171743 20100730
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C11/406

Abstract:
A device includes a plurality of memory areas each including a plurality of memory cells required to perform refresh of information stored therein by a plurality of sense amplifiers, a first control circuit determining, in connection with one refresh requirement signal at a time, a number of refresh-target memory areas to produce a determined number, a second control circuit controlling, in accordance with the one refresh requirement signal at a time, refresh operation with respect to the refresh-target memory areas, and a third control circuit adjusting, in connection with the refresh operation, an active time-out time interval according to the determined number. The active time-out time interval indicates a time interval from a first time instant when the sense amplifiers are activated to a second time instant when word lines related to the refresh-target memory areas are inactivated.
Public/Granted literature
- US20120026813A1 Semiconductor device changing an active time-out time interval Public/Granted day:2012-02-02
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