Invention Grant
US08889463B2 Sloped structure, method for manufacturing sloped structure, and spectrum sensor
有权
斜坡结构,倾斜结构的制造方法和光谱传感器
- Patent Title: Sloped structure, method for manufacturing sloped structure, and spectrum sensor
- Patent Title (中): 斜坡结构,倾斜结构的制造方法和光谱传感器
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Application No.: US13572192Application Date: 2012-08-10
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Publication No.: US08889463B2Publication Date: 2014-11-18
- Inventor: Takahiko Yoshizawa
- Applicant: Takahiko Yoshizawa
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2011-179646 20110819
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0232 ; G02B5/20 ; H01L29/06 ; G01J3/02 ; H01L31/0216 ; G02B5/28 ; G01J1/04 ; G01J3/36 ; H01L31/0352 ; G01J3/12

Abstract:
A method for manufacturing a sloped structure is disclosed. The method includes the steps of: (a) forming a sacrificial film above a substrate; (b) forming a first film above the sacrificial film, the first film having a first portion connected to the substrate, a second portion located above the sacrificial film, a third portion located between the first portion and the second portion, and a thin region in a portion of the third portion or in a boundary section between the second portion and the third portion and having a thickness smaller than the first portion; (c) removing the sacrificial film; and (d) bending the first film in the thin region, after the step (c), thereby sloping the second portion of the first film with respect to the substrate.
Public/Granted literature
- US20130043551A1 SLOPED STRUCTURE, METHOD FOR MANUFACTURING SLOPED STRUCTURE, AND SPECTRUM SENSOR Public/Granted day:2013-02-21
Information query
IPC分类: