Structure and method for interconnect spatial frequency doubling using selective ridges

Invention Grant

US08889506B1 Structure and method for interconnect spatial frequency doubling using selective ridges 有权

Title translation: 使用选择性脊的互连空间倍频的结构和方法

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Patent Title: Structure and method for interconnect spatial frequency doubling using selective ridges
Patent Title (中): 使用选择性脊的互连空间倍频的结构和方法
Application No.: US13931737

Application Date: 2013-06-28
Publication No.: US08889506B1

Publication Date: 2014-11-18
Inventor: John H. Zhang , Lawrence A. Clevenger , Carl Radens , Yiheng Xu , Edem Wornyo
Applicant: STMicroelectronics, Inc. , International Business Machines Corporation
Applicant Address: US TX Coppell US NY Armonk
Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
Current Assignee: STMicroelectronics, Inc.,International Business Machines Corporation
Current Assignee Address: US TX Coppell US NY Armonk
Agency: Seed IP Law Group PLLC
Main IPC: H01L29/94
IPC: H01L29/94 ; H01L31/062 ; H01L21/768 ; H01L23/522

Structure and method for interconnect spatial frequency doubling using selective ridges

Abstract:

An integrated circuit die includes a semiconductor substrate, a first dielectric layer on the substrate, and a second dielectric layer on the first dielectric layer. Trenches are formed in the first and second dielectric layers. Metal interconnection tracks are formed on sidewalls of the trench on the exposed portions of the second dielectric layer.

Abstract(Chinese):

集成电路管芯包括半导体衬底，衬底上的第一介电层和第一介电层上的第二电介质层。沟槽形成在第一和第二电介质层中。金属互连轨道形成在第二电介质层的暴露部分上的沟槽的侧壁上。

Public/Granted literature

US2115626A Rangefinder and like optical measuring instrument Public/Granted day:1938-04-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/94	....金属—绝缘体—半导体，例如MOS