Method and apparatus for etching the silicon oxide layer of a semiconductor substrate

Invention Grant

US08889563B2 Method and apparatus for etching the silicon oxide layer of a semiconductor substrate 有权

Title translation: 用于蚀刻半导体衬底的氧化硅层的方法和装置

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Patent Title: Method and apparatus for etching the silicon oxide layer of a semiconductor substrate
Patent Title (中): 用于蚀刻半导体衬底的氧化硅层的方法和装置
Application No.: US13024782

Application Date: 2011-02-10
Publication No.: US08889563B2

Publication Date: 2014-11-18
Inventor: Kwon-Taek Lim
Applicant: Kwon-Taek Lim
Applicant Address: KR Busan
Assignee: Pukyong National University Industry-University Cooperation Foundation
Current Assignee: Pukyong National University Industry-University Cooperation Foundation
Current Assignee Address: KR Busan
Agency: Kinney & Lange, P.A.
Priority: KR10-2011-0008163 20110127
Main IPC: H01L21/306
IPC: H01L21/306 ; B81C1/00 ; H01L21/311

Abstract:

An aspect of the invention is to provide a method and apparatus for etching the silicon oxide layer of a semiconductor substrate, whereby the processing time for cleaning or rinsing, as well as any undesired aftereffects by residual hydrofluoric acid, may be reduced, in using the dry etching method involving the use of dense carbon dioxide that contains hydrofluoric acid, during the manufacturing process of a micro-electronic device.

Abstract(Chinese):

本发明的一个方面是提供一种用于蚀刻半导体衬底的氧化硅层的方法和装置，从而可以减少用于清洗或冲洗的处理时间以及由残留的氢氟酸引起的任何不期望的后果，在微电子器件的制造过程中涉及使用含有氢氟酸的致密二氧化碳的干蚀刻方法。

Public/Granted literature

US20120196445A1 METHOD AND APPARATUS FOR ETCHING THE SILICON OXIDE LAYER OF A SEMICONDUCTOR SUBSTRATE Public/Granted day:2012-08-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）