This disclosure concerns memory cell sensing. One or more methods include determining a data state of a first cell coupled to a first data line in response to a request to sense a data state of a second cell coupled to a second data line, applying a reference voltage to the first data line, floating the second data line while adjusting a voltage of the first data line to an adjusted voltage associated with the determined data state of the first cell, determining an effect on the second data line due, at least in part, to the adjusting the voltage of the first data line, and sensing the data state of the second cell by applying a particular sensing voltage to a selected access line to which the first cell and the second cell are coupled, the particular sensing voltage based on the determined effect on the second data line.